Back to results
US 11,894,427 B2Granted
Semiconductor device, and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorJhen-Yu Tsai
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a surface. The surface has a first portion and a second portion protruding from the first portion. The semiconductor device also includes a dielectric layer disposed on the second portion and a gate conductive layer disposed on the dielectric layer.
Claims9
A semiconductor device, comprising:
- a substrate having a surface, wherein the surface has a first portion and a second portion protruding from the first portion;
- a dielectric layer disposed on the second portion;
- and
- a gate conductive layer disposed on the dielectric layer;
- wherein a lateral surface of the dielectric layer is substantially coplanar with a lateral surface of the gate conductive layer;
- wherein the surface of the substrate further comprises a third portion extending between the first portion and the second portion, wherein the third portion is substantially coplanar with the lateral surface of the dielectric layer and the lateral surface of the gate conductive layer;
- wherein the semiconductor device comprises a first spacer contacting the third portion of the surface of the substrate.
4 more elements
Dependencies are inferred from the claim text.