Gate-controlled diode and chip
AssigneeHuawei Technologies Co., Ltd.
InventorWei Li
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AssigneeHuawei Technologies Co., Ltd.
InventorWei Li
Estimating the term…
A gate-controlled diode includes a substrate, a gate stacked on the substrate, a gate insulation layer, a first two-dimensional semiconductor layer, a second two-dimensional semiconductor layer, a source, and a drain disposed separately from the source. The gate is embedded in a surface of the substrate, and the gate insulation layer covers the surface of the substrate in which the gate is disposed. The first two-dimensional semiconductor layer is stacked on the gate insulation layer, a portion of the second two-dimensional semiconductor layer is stacked on the gate insulation layer, another portion is stacked on the first two-dimensional semiconductor layer. The another portion of the second two-dimensional semiconductor layer stacked on the first two-dimensional semiconductor layer forms a heterojunction. An orthographic projection of the heterojunction onto the substrate is in an orthographic projection of the gate onto the substrate.
A gate-controlled diode, comprising:
A chip, comprising a circuit and a gate-controlled diode, wherein the gate-controlled diode comprises:
Dependencies are inferred from the claim text.