Memory and formation method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorsQiang Zhang, Zhan Ying
Life of this patent
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Abstract
A memory formation method includes: providing a substrate; forming a first mask layer on the substrate, in the first mask layer there being formed a plurality of parallel-arranged strip-shaped patterns positioned above the array area, and an end of each of the strip-shaped patterns being connected to the first mask layer on the peripheral area of the substrate; forming a second mask layer on the first mask layer, in the second mask layer there being formed a plurality of first patterns; and etching layer by layer by using the second mask layer and the first mask layer as masks to transfer the strip-shaped patterns and the first patterns into the substrate to form the discrete active areas arranged in an array.
Claims12
A memory, comprising:
- a substrate, comprising an array area and a peripheral area encircling the array area;
- and
- a plurality of discrete active areas arranged in staggered rows and located in the array area;
- and, wherein
- a first-positioned discrete active area, in each row of a first plurality of adjacent rows, contacts the substrate of the peripheral area at a first side of the array area;
- a first-positioned discrete active area, in each row of a second plurality of adjacent rows, contacts the substrate of the peripheral area at a second side of the array area that intersects the first side of the array area;
- and
- the discrete active areas are separated from each other by a shallow trench isolation structure;
- wherein a last-positioned discrete active area, in each row of the first plurality of adjacent rows, contacts the substrate of the peripheral area;
- and
- a last-positioned discrete active area, in each row of the second plurality of adjacent rows, contacts the substrate of the peripheral area.
Dependencies are inferred from the claim text.