Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions

A method for manufacturing an optoelectronic device including the following steps of:

• a) forming a substrate having a support face;
• b) forming a first series of first areas on the support face which are adapted to the formation of all or part of light-emitting diodes, said light-emitting diodes comprising a first portion doped according to a first type of doping, a second portion forming an active area and a third portion doped according to a second type of doping;
• c) forming a second series of second areas on the support face, which are adapted to the formation of at least one light confinement wall element capable of forming a light confinement wall, the second areas being distinct from the first areas, the second areas defining therebetween sub-pixel areas;
• d) forming, from the first areas, all or part of light-emitting diodes;
• e) forming, by the same technique as in step d), from the second areas, all or part of light confinement wall elements, concomitantly with all or part of the light-emitting diodes which are formed in step d).