Image sensor device and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
Life of this patent
Estimating the term…
Abstract
A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.
Claims20
A method, comprising:
- forming a plurality of openings extending into a substrate from a front surface of the substrate, the substrate including a silicon-based semiconductor material;
- forming a patterned structure between sidewalls of each of the plurality of openings, the patterned structure including a dielectric layer;
- filling the plurality of openings with a non-silicon-based semiconductor material;
- and
- forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the non-silicon-based semiconductor material.
A method, comprising:
- forming a plurality of openings extending into a substrate from a front surface of the substrate, the substrate including a silicon-based semiconductor material;
- forming a plurality of protruded patterns between sidewalls of each of the plurality of openings, the plurality of protruded patterns including a dielectric layer;
- filling the plurality of openings with a non-silicon-based semiconductor material;
- and
- forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the non-silicon-based semiconductor material.
A method, comprising:
- forming a plurality of openings extending into a substrate from its front surface, the substrate including a silicon-based semiconductor material;
- forming a patterned structure between sidewalls of each of the plurality of openings, the patterned structure including a dielectric layer;
- filling the plurality of openings with a non-silicon-based semiconductor material to form a plurality of pixels, respectively;
- forming a device layer including one or more silicon-based structures over the plurality of pixels;
- forming a plurality of metallization layers over the device layer;
- and
- thinning the substrate from its back surface.
Dependencies are inferred from the claim text.