Back to results
US 11,894,406 B2Granted
Solid-state imaging device and electronic apparatus
AssigneeSony Group Corporation
InventorHiromi Okazaki
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a semiconductor layer on which a plurality of pixels are arranged along a light-receiving surface being a main surface of the semiconductor layer, photoelectric conversion units provided for the respective pixels in the semiconductor layer, and a trench element isolation area formed by providing an insulating layer in a trench pattern formed on a light-receiving surface side of the semiconductor layer, the trench element isolation area being provided at a position displaced from a pixel boundary between the pixels.
Claims15
A light-detecting device, comprising:
- a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side, the first side and the second side each extending in a first direction;
- a plurality of photoelectric conversion units disposed in the semiconductor substrate;
- a first trench region disposed in the semiconductor substrate between two of the plurality of photoelectric conversion units in the first direction;
- a first light shielding region disposed above the first side, wherein the first light shielding region is above at least a part of the first trench region in a second direction, the second direction being perpendicular to the first direction, and the first light shielding region is offset from a center portion of the first trench region in a third direction;
- a second trench region disposed in the semiconductor substrate adjacent to at least one of the plurality of photoelectric conversion units in the first direction;
- and
- a second light shielding region disposed above the first side, wherein the second light shielding region is above at least a part of the second trench region in the second direction and offset from a center portion of the second trench region in a fourth direction opposite the third direction,
- wherein a distance between a center of the first trench region and a center of the second trench region is different from a distance between a center of the first light shielding region and a center of the second light shielding region in a cross-sectional view.
5 more elements
An electronic apparatus, comprising:
- a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side, the first side and the second side each extending in a first direction;
- a plurality of photoelectric conversion units disposed in the semiconductor substrate;
- a first trench region disposed in the semiconductor substrate between two of the plurality of photoelectric conversion units in the first direction;
- a first light shielding region disposed above the first side, wherein the first light shielding region is above at least a part of the first trench region in a second direction, the second direction being perpendicular to the first direction, and the first light shielding region is offset from a center portion of the first trench region in a third direction;
- a second trench region disposed in the semiconductor substrate adjacent to at least one of the plurality of photoelectric conversion units in the first direction;
- a second light shielding region disposed above the first side, wherein the second light shielding region is above at least a part of the second trench region in the second direction and offset from a center portion of the second trench region in a fourth direction opposite the third direction;
- and
- an optical system that guides incident light to the photoelectric conversion units, wherein a distance between a center of the first trench region and a center of the second trench region is different from a distance between a center of the first light shielding portion and a center of the second light shielding portion in a cross-sectional view.
5 more elements
Dependencies are inferred from the claim text.