High-K dielectric materials comprising zirconium oxide utilized in display devices
AssigneeApplied Materials, Inc.
InventorsXiangxin Rui, Lai Zhao, Jrjyan Jerry Chen, Soo Young Choi, Yujia Zhai
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Abstract
Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.
Claims20
A thin film transistor structure, comprising:
- a dielectric layer formed on a substrate, wherein the dielectric layer comprises a first layer formed by silicon oxide doped zirconium oxide and a second layer formed by a crystalline zirconium containing material;
- and
- gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes are formed above or below the dielectric layer.
A thin film transistor structure, comprising:
- a dielectric layer formed on a substrate, wherein the dielectric layer comprises a first layer formed by silicon oxide doped zirconium oxide and a second layer formed by a crystalline zirconium containing material and the second layer is layered on the first layer in a pattern that repeats one or more times;
- and
- gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes are formed above or below the dielectric layer.
A thin film transistor structure, comprising:
- a dielectric layer formed on a substrate, wherein the dielectric layer comprises:
- a first layer formed by silicon oxide doped zirconium oxide;
- a second layer formed by a crystalline zirconium containing material;
- and
- a third layer formed by an amorphous zirconium containing material;
- and
- gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes are formed above or below the dielectric layer.
Dependencies are inferred from the claim text.