Integrated circuit devices and methods of fabricating such devices
AssigneeSamsung Electronics Co., Ltd.
InventorsDae-Won Ha, Byoung-Hak Hong
Life of this patent
Estimating the term…
Abstract
An integrated circuit device includes: a plurality of channel regions spaced apart from each other in an active region; a plurality of source/drain regions; an insulating structure on the active region, the insulating structure defining a plurality of gate spaces; a first gate stack structure in a first of the gate spaces, the first gate stack structure including a first work function metal-containing layer; and an isolation stack structure in a second of the gate spaces that is adjacent the first of the gate spaces, the isolation stack structure having a different stack structure from the first gate stack structure and being configured to electrically isolate a portion of the active region.
Claims19
A method of fabricating an integrated circuit device, the method comprising:
- forming an insulating structure on an active region, the insulating structure defining a plurality of gate spaces;
- forming a gate stack structure in a first gate space of the plurality of gate spaces, the gate stack structure comprising a first conductive metal nitride layer and having a first effective work function;
- and
- forming an isolation stack structure in a second gate space of the plurality of gate spaces that is adjacent the first gate space, the isolation stack structure comprising a second conductive metal nitride layer and having a second effective work function that is different than the first effective work function, the second conductive metal nitride layer comprising a same metal nitride as a metal nitride comprised in the first conductive metal nitride layer and having a different thickness than the first conductive metal nitride layer;
- wherein forming the isolation stack structure comprises:
- forming an interfacial layer on the active region;
- forming a gate insulating layer on the interfacial layer;
- forming a La-containing layer on the gate insulating layer;
- and
- forming the second conductive metal nitride layer on the La-containing layer.
A method of fabricating an integrated circuit device, the method comprising:
- forming a fin-type active region on the substrate;
- forming a plurality of source/drain regions on the fin-type active region;
- forming an insulating structure covering the fin-type active region and the plurality of source/drain regions, the insulating structure defining a plurality of gate spaces;
- forming a gate stack structure in a first gate space among the plurality of gate spaces, the gate stack structure comprising a first work function metal-containing layer;
- and
- forming an isolation stack structure in a second gate space among the plurality of gate spaces that is adjacent the first gate space, the isolation stack structure comprising a second work function metal-containing layer, wherein the second work function metal-containing layer comprises a same material as the first work function metal-containing layer and has a different thickness from the first work function metal-containing layer.
A method of fabricating an integrated circuit device, the method comprising:
- forming a fin-type active region on the substrate;
- forming a plurality of source/drain regions on the fin-type active region;
- forming an insulating structure on the fin-type active region and the plurality of source/drain regions, the insulating structure defining a first gate space and a second gate space adjacent the first gate space;
- forming a gate stack structure in the first gate space, the gate stack structure comprising a first metal nitride layer having a first thickness, and a first Al-containing layer having a first Al content;
- and
- forming an isolation stack structure in the second gate space, the isolation stack structure comprising a second metal nitride layer having a second thickness greater than the first thickness, and a second Al-containing layer having a second Al content.
Dependencies are inferred from the claim text.