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US 11,894,364 B2Granted
Semiconductor device
AssigneeAblic Inc.
InventorHiroaki Takasu
Life of this patent
Estimating the term…
Abstract
A semiconductor device has an off transistor (10) in which a gate electrode (3) and a source region (6) of an N-type MOS transistor are connected to a ground terminal and a drain region (5) is connected to an external signal terminal (100b). In the off transistor (10), the gate electrode (3) is extensively provided over a portion or entirety of the drain region (5) in addition to a channel region. A capacitance (C2) formed between the gate electrode (3) and the drain region (5) may be greater than a capacitance (C1) generated between the gate electrode (3) and a ground potential.
Claims7
A semiconductor device, comprising:
- an off transistor in which a gate electrode and a source region of a MOS transistor are connected to a first power terminal or a second power terminal, and a drain region is connected to an external signal terminal,
- wherein in the off transistor, the gate electrode is extensively provided over a portion or entirety of the drain region in addition to a channel region, and
- a capacitance formed between the gate electrode and the drain region is greater than a capacitance generated between the gate electrode and a ground potential.
Dependencies are inferred from the claim text.