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US 11,894,360 B2Granted
Semiconductor memory device having a channel plug
AssigneeSK hynix Inc.
InventorJang Won Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a slit pattern and a trench pattern disposed to extend substantially in parallel with each other in a first direction and channel plugs between the slit pattern and the trench pattern. The channel plugs include a first channel plug adjacent to the slit pattern. A top surface shape of the first channel plug is an elliptical shape. A long axis direction of the first channel plug and the first direction form an acute angle.
Claims20
A semiconductor device comprising:
- a slit pattern and a trench pattern disposed to extend substantially in parallel with each other in a first direction;
- and
- channel plugs between the slit pattern and the trench pattern,
- wherein:
- the channel plugs comprise:
- a first channel plug adjacent to the slit pattern,
- a second channel plug between the first channel plug and the trench pattern;
- a third channel plug between the second channel plug and the trench pattern;
- a fourth channel plug between the third channel plug and the trench pattern;
- and
- a fifth channel plug traversed by the trench pattern,
- wherein:
- a top surface shape of the first channel plug is an elliptical shape,
- a top surface shape of each of the third channel plug and the fourth channel plug is substantially a circle shape,
- a top surface shape of the fifth channel plug is substantially a separated circle shape separated by the trench pattern, and
- a long axis direction of the first channel plug and the first direction form an acute angle.
13 more elements
A semiconductor device comprising:
- a slit pattern and a trench pattern extending substantially in parallel with each other in a first direction;
- and
- channel plugs between the slit pattern and the trench pattern,
- wherein the channel plugs comprise:
- a first channel plug adjacent to the slit pattern, the first channel plug having an elliptical top surface shape or an elliptical cross-sectional shape;
- a second channel plug between the first channel plug and the trench pattern;
- a third channel plug between the second channel plug and the trench pattern;
- and
- a fourth channel plug between the third channel plug and the trench pattern,
- wherein a first distance between the slit pattern and the first channel plug is greater than a second distance between the first channel plug and the second channel plug.
7 more elements
A semiconductor device comprising:
- two slit patterns extending substantially in parallel with each other in a first direction;
- a trench pattern between the two slit patterns extending in parallel with the slit patterns in the first direction;
- and
- channel plugs between the slit patterns and the trench pattern,
- wherein the slit patterns, the trench pattern, and the channel plugs are disposed in a cell region,
- wherein the channel plugs comprise:
- two first channel plugs adjacent to the slit patterns, respectively;
- two second channel plugs between the two first channel plugs;
- two third channel plugs between the two second channel plugs;
- and
- two fourth channel plugs between the two third channel plugs, wherein:
- the two first, second, third, and fourth channel plugs are arranged in a zigzag form in a second direction perpendicular to the first direction,
- the trench pattern is disposed between the two fourth channel plugs,
- top surface shapes of the two first channel plugs are an elliptical shape,
- a maximum diameter of each of the two first channel plugs are greater than a maximum diameter of each of the two second, third, and the fourth channel plugs,
- a long axis direction of the first two channel plugs and the first direction form an acute angle greater than 1° and less than 90°.
13 more elements
Dependencies are inferred from the claim text.