Semiconductor device and manufacturing method thereof
AssigneeKioxia Corporation
InventorMasayuki Miura
Life of this patent
Estimating the term…
Abstract
In a semiconductor device, a substrate has a main surface. A first semiconductor chip has a first front surface and a first back surface, and is mounted on the main surface via a plurality of bump electrodes. A first spacer has a second front surface and a second back surface that is mounted on the main surface. A height of the second front surface from the main surface is within a range between a highest height and a lowest height of the first back surface from the main surface. A second spacer has a third front surface and a third back surface that is mounted on the main surface. A height of the third front surface from the main surface is within the range between the highest height and the lowest height of the first back surface from the main surface.
Claims7
A semiconductor device comprising:
- a substrate having a main surface;
- a first semiconductor chip having a first front surface and a first back surface opposite to the first front surface, the first front surface being mounted on the main surface via a plurality of bump electrodes;
- a first spacer having a second front surface and a second back surface, the second back surface being mounted on the main surface, and a height of the second front surface from the main surface being within a range between a highest height and a lowest height of the first back surface from the main surface;
- and
- a second spacer having a third front surface and a third back surface, the third back surface being mounted on the main surface, and a height of the third front surface from the main surface being within a range between the highest height and the lowest height of the first back surface from the main surface.
Dependencies are inferred from the claim text.