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US 11,894,349 B2Granted
Semiconductor device comprising PN junction diode and Schottky barrier diode
AssigneeRohm Co., Ltd.
InventorKeiji Okumura
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.
Claims13
A semiconductor module, comprising:
- a first switching device and a second switching device each of which includes a first electrode and a control electrode on a front side thereof and a second electrode on a back side thereof, each of the first switching device and a second switching device including a MOSFET structure which includes a PN junction diode;
- a first Schottky diode and a second Schottky diode each of which includes an anode electrode on a front side thereof and a cathode electrode on a back side thereof;
- a first conductive layer on which the first switching device and the first Schottky diode are mounted with the back side of the first switching device and the back side of the first Schottky diode facing to the first conductive layer;
- a second conductive layer on which the second switching device and the second Schottky diode are mounted with the back side of the second switching device and the back side of the second Schottky diode facing to the second conductive layer;
- a first connection metal member that connects the first electrode of the first switching device and the anode electrode of the first Schottky diode;
- a second connection metal member that connects the anode electrode of the first Schottky diode to a third conductive layer which is electrically connected to the second conductive layer, the second connection metal member being disposed such that the first connection metal member and the second connection metal member form an obtuse angle therebetween;
- an inductance of a conductive path between the first electrode of the first switching device and the third conductive layer is larger than an inductance of a conductive path between the anode electrode of the first Schottky diode and the third conductive layer;
- a third connection metal member that connects the first electrode of the second switching device and the anode electrode of the second Schottky diode;
- and
- a fourth connection metal member that connects the anode electrode of the second Schottky diode to a fourth conductive layer, the fourth connection metal being disposed such that the third connection metal member and the fourth connection metal member form an obtuse angle therebetween.
7 more elements
A semiconductor module, comprising:
- a first switching device and a second switching device each of which includes a first electrode and a control electrode on a front side thereof and a second electrode on a back side thereof, each of the first switching device and a second switching device including a MOSFET structure which includes a PN junction diode;
- a first Schottky diode and a second Schottky diode each of which includes an anode electrode on a front side thereof and a cathode electrode on a back side thereof;
- a first conductive layer on which the first switching device and the first Schottky diode are mounted with the front side of the first switching device and the front side of the first Schottky diode facing to the first conductive layer;
- a second conductive layer on which the second switching device and the second Schottky diode are mounted with the front side of the second switching device and the front side of the second Schottky diode facing to the second conductive layer;
- a first connection metal member that connects the second electrode of the first switching device and the cathode electrode of the first Schottky diode;
- a second connection metal member that connects the cathode electrode of the first Schottky diode to a third conductive layer, the second connection metal member being disposed such that the first connection metal member and the second connection metal member form an obtuse angle therebetween;
- an inductance of a conductive path between the first electrode of the first switching device and the third conductive layer is larger than an inductance of a conductive path between the anode electrode of the first Schottky diode and the third conductive layer;
- a third connection metal member that connects the second electrode of the second switching device and the cathode electrode of the second Schottky diode;
- and
- a fourth connection metal member that connects the cathode electrode of the second Schottky diode to a fourth conductive layer which is electrically connected to the first conductive layer, the fourth connection metal member being disposed such that the third connection metal member and the fourth connection metal member form an obtuse angle therebetween.
7 more elements
Dependencies are inferred from the claim text.