Semiconductor package having a high reliability

A semiconductor package, comprising:

• a substrate base;
• a first semiconductor device connected to the substrate base by a first connection terminal;
• a second semiconductor device connected to the first semiconductor device by a second connection terminal;
• a first underfill having a first height between the substrate base and the first semiconductor device;
• a second underfill having a second height between the first semiconductor device and the second semiconductor device;
• a top semiconductor device above the second semiconductor device;
• a thermal interface material (TIM) layer on the top semiconductor device;
• and
• a heat dissipation member on the TIM layer;
• wherein the first underfill has a first outer surface portion in a horizontal direction parallel to an upper surface of the substrate base and the second underfill has a second outer surface portion in the horizontal direction parallel to the upper surface of the substrate base,
• a first horizontal distance from a vertical line along a side surface of the second semiconductor device to the first outer surface portion is greater than a second horizontal distance from the side surface of the second semiconductor device to the second outer surface portion, and
• wherein the first height is greater than the second height.

A semiconductor package, comprising:

• a substrate base;
• a first semiconductor device connected to the substrate base by a first connection terminal;
• a second semiconductor device connected to the first semiconductor device by a second connection terminal;
• a first underfill having a first height between the substrate base and the first semiconductor device;
• a second underfill having a second height between the first semiconductor device and second semiconductor device;
• a top semiconductor device above the second semiconductor device;
• and
• a top underfill between the second semiconductor device and the top semiconductor device;
• wherein the first underfill has a first outer end in a horizontal direction parallel to an upper surface of the substrate base and the second underfill has a second outer end in the horizontal direction parallel to the upper surface of the substrate base,
• a first horizontal distance from a vertical line along a side surface of the second semiconductor device to the first liter end is greater than a second horizontal distance from the side surface of the second semiconductor device to the second outer end, and
• wherein the first height is greater than the second height.