Multi-metal contact structure

A method, comprising:

• providing a microelectronic component comprising:
• providing a first substrate having a recess or opening extending from a first surface of the first substrate, at least a portion of the first surface of the first substrate having a planarized topography;
• disposing a first conductive material having a first melting point within the recess or opening, extending normal to a plane of the first substrate and forming a first portion of a first interconnect structure of the microelectronic component;
• disposing a second conductive material having a second melting point different from the first melting point within the recess or opening, extending normal to the plane of the first substrate and forming a second portion of the first interconnect structure of the microelectronic component, the second portion of the first interconnect structure comprising a plurality of conductive portions at least partially surrounded by the first conductive material;
• and
• bonding a second interconnect structure of a second substrate to the first interconnect structure by at least one of a direct bond of an insulator material to another insulator material without an adhesive or by a metal to metal diffusion bond, thereby forming one of an electrical contact pad or a via with the first interconnect structure and the second interconnect structure.

A method comprising:

• providing a substrate having a recess or opening extending from a first surface of the substrate, at least a portion of the first surface of the substrate having a planarized topography;
• disposing a first conductive material having a first coefficient of thermal expansion (CTE) within the recess or opening and forming a first portion of an interconnect structure, the first portion of the interconnect structure extending normal to a plane of the substrate;
• disposing a second conductive material having a second CTE different from the first CTE within the recess or opening, the second conductive material forming a second portion of the interconnect structure, the second portion of the interconnect structure comprising a plurality of conductive portions extending normal to the plane of the substrate, the first conductive material at least partially surrounding the second conductive material;
• and
• disposing a barrier layer between the substrate and the first conductive material.

A method of fabricating a microelectronic component comprising:

• forming a recess or opening in a surface of a substrate;
• disposing a first conductive material having a first coefficient of theuiial expansion (CTE) within the recess or opening, the first conductive material at least partially filling the recess or opening and forming a first portion of an interconnect structure of the microelectronic component;
• disposing a second conductive material having a second CTE different from the first CTE within the recess or opening and forming a second portion of the interconnect structure of the microelectronic component;
• and
• planarizing the surface of the substrate, the first conductive material, and the second. conductive material and forming a planar bonding surface comprising the first portion and the second portion of the interconnect stricture and a planar dielectric surface.