Semiconductor device and method of forming semiconductor package with RF antenna interposer having high dielectric encapsulation

A method of making a semiconductor device, comprising:

• providing a substrate;
• disposing an electrical component over a surface of the substrate;
• disposing an antenna interposer over the substrate;
• and depositing a first encapsulant around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant;
• and
• depositing a second encapsulant over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.

A method of making a semiconductor device, comprising:

• providing a substrate;
• disposing an antenna interposer over the substrate;
• and
• depositing a first encapsulant around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant in the range of 14 to 21.

A method of making a semiconductor device, comprising:

• providing an antenna substrate comprising a plurality of antenna interposers;
• forming a plurality of bumps over the antenna substrate;
• singulating the antenna substrate into a plurality of individual antenna interposers;
• providing a substrate;
• disposing the individual antenna interposers over the substrate;
• and
• depositing a first encapsulant around the individual antenna interposers, wherein the first encapsulant comprises a high dielectric constant.

A semiconductor device, comprising:

• a substrate;
• an electrical component disposed over a surface of the substrate;
• an antenna interposer disposed over the substrate;
• and
• a first encapsulant deposited around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant in the range of 14 to 21.

A semiconductor device, comprising:

• a substrate;
• an electrical component disposed over a surface of the substrate;
• an antenna interposer disposed over the substrate;
• a first encapsulant deposited around the antenna interposer, wherein the first encapsulant comprises a high dielectric constant;
• and
• a second encapsulant deposited over the electrical component, wherein the second encapsulant comprises a low dielectric constant less than the high dielectric constant of the first encapsulant.