Semiconductor packages and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yu Chen, Chun-Chih Chuang, Kuan-Lin Ho, Yu-Min Liang, Jiun Yi Wu
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Abstract
A package includes an interposer structure free of any active devices. The interposer structure includes an interconnect device; a dielectric film surrounding the interconnect device; and first metallization pattern bonded to the interconnect device. The package further includes a first device die bonded to an opposing side of the first metallization pattern as the interconnect device and a second device die bonded to a same side of the first metallization pattern as the first device die. The interconnect device electrically connects the first device die to the second device die.
Claims20
A method comprising:
- forming a seed layer over a carrier substrate;
- forming a patterned dielectric layer over the seed layer, the patterned dielectric layer comprising a plurality of openings;
- plating a first metallization pattern in the plurality of openings;
- bonding an interconnect device to a first surface of the first metallization pattern, the interconnect device is free of any transistors;
- bonding a passive device to the first surface of the first metallization pattern, the passive device is free of any active devices;
- burying the interconnect device and the passive device in a dielectric film;
- bonding a first device die to a second surface of the first metallization pattern, the second surface is opposite the first surface;
- and
- bonding a second device die to the second surface of the first metallization pattern, wherein the interconnect device electrically routes signals between the first device die and the second device die.
A method comprising
- forming a first redistribution structure on a carrier substrate;
- after forming the first redistribution structure on the carrier substrate, flip-chip bonding an interconnect die to a first surface of the first redistribution structure;
- encapsulating the interconnect die in an insulating material;
- forming a second redistribution structure over the interconnect die and the insulating material;
- removing the carrier substrate to expose a second surface of the first redistribution structure;
- and
- flip chip bonding a first integrated circuit die and a second integrated circuit die to the second surface of the first redistribution structure, wherein the interconnect die is configured to route signals between the first integrated circuit die and the second integrated circuit die.
A method comprising:
- forming a first redistribution structure over a carrier;
- directly bonding an interconnect die and a passive device die to the first redistribution structure, the interconnect die being free of transistors;
- dispensing a first underfill between the interconnect die and the passive device;
- dispensing an insulating material around the interconnect die, the passive device, and the first underfill;
- forming a second redistribution structure over the insulating material, the interconnect die, and the passive device, the second redistribution structure being electrically connected to the interconnect die;
- removing the carrier;
- and
- directly bonding a first device die and a second device die to an opposite side of the first redistribution structure as the interconnect die and the passive device die, the first device die being electrically connected to the second device die through the interconnect die.
Dependencies are inferred from the claim text.