System on integrated chips (SoIC) and semiconductor structures with integrated SoIC
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Tzuan-Horng Liu, Ming-Fa Chen, Chao-Wen Shih, Sung-Feng Yeh
Life of this patent
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Abstract
A method of forming semiconductor structure includes attaching backsides of top dies to a front side of a bottom wafer, the bottom wafer comprising a plurality of bottom dies; forming first conductive pillars on the front side of the bottom wafer adjacent to the top dies; forming a first dielectric material on the front side of the bottom wafer around the top dies and around the first conductive pillars; and dicing the bottom wafer to form a plurality of structures, each of the plurality of structures comprising at least one of the top dies and at least one of the bottom dies.
Claims20
A semiconductor structure comprising:
- a first die having a bonding pad at a first side of the first die;
- a second die having a first side that faces away from the first die and having a second side attached to the first side of the first die, the second die having a die connector at the first side of the second die;
- a first conductive pillar attached to the bonding pad of the first die and adjacent to the second die;
- a dielectric material on the first side of the first die around the second die and around the first conductive pillar, wherein a first width of the dielectric material, measured between opposing sidewalls of the dielectric material laterally distal from the second die, is substantially the same as a second width measured between opposing sidewalls of the first die, wherein the first conductive pillar extends through the dielectric material;
- a molding material around the first die, the second die, the first conductive pillar, and the dielectric material, wherein the molding material extends along and contacts the opposing sidewalls of the dielectric material and the opposing sidewalls of the first die;
- a second conductive pillar in the molding material and extending through the molding material;
- and
- a redistribution structure on the molding material and electrically coupled to the first die, the second die, the first conductive pillar, and the second conductive pillar, wherein the second die is between the first die and the redistribution structure.
A semiconductor structure comprising:
- a bottom die;
- a top die, wherein a backside of the top die is attached to a front side of the bottom die;
- a first conductive pillar attached to the front side of the bottom die adjacent to the top die;
- a dielectric material on the front side of the bottom die and around the top die and the first conductive pillar, wherein the first conductive pillar extends through the dielectric material;
- a molding material around the top die, the bottom die, and the first conductive pillar;
- a second conductive pillar in the molding material, wherein the second conductive pillar extends through the molding material;
- and
- a redistribution structure on the molding material and electrically coupled to the top die, the first conductive pillar and the second conductive pillar, wherein the top die is between the bottom die and the redistribution structure.
A semiconductor structure comprising:
- a first die having bonding pads at a front side of the first die;
- a second die having die connectors at a front side of the second die, wherein a backside of the second die is attached to the front side of the first die;
- a first conductive pillar bonded to a first one of the bonding pads at the front side of the first die;
- a first dielectric material on the front side of the first die, wherein the first dielectric material surrounds the second die and the first conductive pillar, wherein sidewalls of the first dielectric material are aligned with sidewalls of the first die;
- a molding material around the first die and the first dielectric material;
- and
- a first redistribution structure on the molding material and electrically coupled to the first die, the second die, and the first conductive pillar, wherein the second die is between the first die and the first redistribution structure, and wherein sidewalls of the first redistribution structure are aligned with sidewalls of the molding material.
Dependencies are inferred from the claim text.