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US 11,894,307 B2Granted
Semiconductor device package
AssigneeSuzhou Lekin Semiconductor Co., Ltd.
InventorsSang Youl Lee, Ki Man Kang, Eun Dk Lee
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Abstract
Disclosed in an embodiment is a semiconductor device package comprising a substrate and a plurality of semiconductor structures arranged to be spaced apart at the center of the substrate, wherein the semiconductor structure is arranged on the substrate and includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer arranged between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and the ratio of the maximum height of the outermost surface of the first conductive type semiconductor layer to the length of the spacing distance between the adjacent semiconductor structures is 1:3 to 1:60.
Claims20
A semiconductor device package comprising:
- a substrate;
- a plurality of semiconductor structures disposed to be spaced apart from each other at a central portion of the substrate,
- wherein the semiconductor structure is disposed on the substrate and includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,
- the second conductivity-type semiconductor layer and the active layer are disposed between the first conductivity type semiconductor layer and the substrate, and
- a length ratio of a maximum height of an outermost surface of the first conductivity-type semiconductor layer to a separation distance between the adjacent semiconductor structures is in a range of 1:3 to 1:60;
- an intermediate layer disposed on the outermost surface of the first conductivity-type semiconductor layer,
- wherein the intermediate layer overlaps the outermost surface of the first conductivity-type semiconductor layer in a direction perpendicular to a thickness direction thereof, and
- the intermediate layer includes a plurality of layers and is made of any one selected from among metal, ceramic, and semiconductor materials.
5 more elements
A semiconductor device package comprising:
- a substrate;
- a plurality of semiconductor structures disposed to be spaced apart from each other at a central portion of the substrate,
- wherein the semiconductor structure is disposed on the substrate and includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer,
- the second conductivity-type semiconductor layer and the active layer are disposed between the first conductivity type semiconductor layer and the substrate, and
- a length ratio of a maximum height of an outermost surface of the first conductivity-type semiconductor layer to a separation distance between the adjacent semiconductor structures is in a range of 1:3 to 1:60;
- a channel layer disposed between the substrate and the semiconductor structure to expose portions of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
- a first electrode disposed on the first conductivity-type semiconductor layer exposed by the channel layer;
- and
- a second electrode disposed on the second conductivity-type semiconductor layer exposed by the channel layer.
6 more elements
A display apparatus comprising:
- a semiconductor device package which includes a substrate, a plurality of semiconductor structures disposed to be spaced apart from each other at a central region of the substrate, a plurality of first interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to a first conductivity-type semiconductor layer, and a plurality of second interconnection lines disposed between the substrate and the plurality of semiconductor structures and electrically connected to a second conductivity-type semiconductor layer;
- a plurality of data lines connected to the plurality of first interconnection lines;
- a plurality of scan lines connected to the plurality of second interconnection lines;
- a first driving unit connected to the plurality of data lines to provide a first control signal;
- a second driving unit connected to the plurality of scan lines to provide a second control signal;
- and
- a controller configured to determine the number of time divisions according to input data to provide the first control signal and the second control signal to the first driving unit and the second driving unit,
- wherein the semiconductor structure is disposed on the substrate and includes the first conductivity-type semiconductor layer, the second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and
- wherein a length ratio of a maximum height of an outermost surface of the first conductivity-type semiconductor layer to a separation distance between the adjacent semiconductor structures is in a range of 1:3 to 1:60.
6 more elements
Dependencies are inferred from the claim text.