Back to results
US 11,894,284 B2Granted
Semiconductor structure having silver-indium transient liquid phase bonding joint
AssigneeLmdj Management LLC
InventorsYongjun Huo, Chin Chung Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor structure having a silver-indium transient liquid phase bonding joint is provided. With the ultra-thin silver-indium transient liquid phase bonding joint formed between the semiconductor device and the heat-spreading mount, its thermal resistance can be minimized to achieve a high thermal conductivity. Therefore, the heat spreading capability of the heat-spreading mount can be fully realized, leading to an optimal performance of the high power electronics and photonics devices.
Claims7
A semiconductor structure comprising:
- a semiconductor device;
- a heat-spreading mount;
- a bonding joint joining the semiconductor device and the heat-spreading mount, wherein the bonding joint includes a sandwich bonding structure, and the sandwich bonding structure includes:
- a first Ag—In solid solution layer in contact with the semiconductor device;
- a second Ag—In solid solution layer in contact with the heat-spreading mount;
- and
- an Ag2In IMC (intermetallics compound) layer sandwiched by the first Ag—In solid solution layer and the second Ag—In solid solution layer, wherein a thickness of the Ag2In IMC layer is larger than a thickness of the first Ag—In solid solution layer and larger than a thickness of the second Ag—In solid solution layer.
4 more elements
Dependencies are inferred from the claim text.