FinFET device having oxide region between vertical fin structures

A device comprising:

• a first fin structure disposed over a substrate, the first fin structure including:
• a first portion formed of a first semiconductor material;
• and
• a second portion formed of a second semiconductor material, the second semiconductor material being different than the first semiconductor material;
• and
• a second fin structure disposed over the substrate and spaced apart from the first fin structure;
• a first dielectric layer extending from the first fin structure to the second fin structure;
• a first capping layer disposed directly on at least one of the first portion and the second portion of the first fin structure;
• a second capping layer disposed on the first capping layer and physically contacting the first dielectric layer;
• a gate dielectric layer disposed directly on the first capping layer;
• a gate electrode layer disposed on the gate dielectric layer;
• and
• a second dielectric layer disposed directly on the second capping layer, wherein the gate dielectric layer is further disposed directly on the second dielectric layer.

A device comprising:

• a first fin structure disposed over a substrate, the first fin structure including:
• a first semiconductor material layer;
• a first dielectric layer disposed on the first semiconductor material layer;
• a second semiconductor material layer disposed on the first dielectric layer;
• and
• a second fin structure disposed over the substrate, the second fin structure including a third semiconductor material layer;
• a first capping layer disposed directly on the third semiconductor material layer of the second fin structure;
• a second capping layer disposed directly on the first dielectric layer of the first fin structure;
• a first gate dielectric layer disposed directly on the first capping layer that is disposed directly on the third semiconductor material layer of the second fin structure;
• and
• a first gate electrode layer disposed directly on the first gate dielectric layer.