Semiconductor substrate, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device
AssigneeFilnex Inc.
InventorMitsuhiko Ogihara
Life of this patent
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Abstract
To prevent the surface of a base substrate and the bottom surface of a separated semiconductor epitaxial layer from being bonded to each other even after a removal layer is removed, the semiconductor substrate includes a base substrate, a first removal layer provided on the base substrate, a second removal layer provided above the first removal layer, and a semiconductor epitaxial layer provided above the second removal layer, and an etching rate of the second removal layer for a predetermined etching material is larger than the etching rate of the first removal layer for the predetermined etching material.
Claims12
A semiconductor substrate comprising:
- a base substrate;
- a first removal layer that is provided on the base substrate and composed of AlxGa1-xAs (0.6<x≤0.8);
- a second removal layer that is provided above the first removal layer and composed of AlyGa1-yAs (0.7<y≤1, y>x);
- and
- a semiconductor epitaxial layer that is provided above the second removal layer and composed of AltGa1-tAs (0≤t≤1), wherein
- an etching rate of the second removal layer for a predetermined etching material is larger than an etching rate of the first removal layer for the predetermined etching material, wherein
- at least a portion of the first removal layer remains at the time when all of the second removal layer is removed by performing etching using the predetermined etching material.
A method for manufacturing a semiconductor substrate comprising the steps of:
- preparing a base substrate;
- forming a first removal layer composed of AlxGa1-xAs (0.6<x≤0.8) on the base substrate;
- forming a second removal layer, above the first removal layer, that is composed of AlyGa1-yAs (0.7<y≤1, y>x) and has a larger etching rate for a predetermined etching material than the etching rate of the first removal layer for the predetermined etching material;
- forming a semiconductor epitaxial layer composed of AltGa1-tAs (0≤t≤1) above the second removal layer;
- removing the second removal layer by performing etching using the predetermined etching material;
- and
- bonding the semiconductor epitaxial layer to a destination substrate different from the base substrate after removing the second removal layer.
A method for manufacturing a semiconductor device comprising the steps of:
- preparing a semiconductor substrate including a base substrate, a first removal layer that is provided on the base substrate and composed of AlxGa1-xAs (0.6<x≤0.8), a second removal layer that is provided above the first removal layer and is composed of AlyGa1-yAs (0.7≤y≤1, y>x), and a semiconductor epitaxial layer that is provided above the second removal layer and composed of AltGa1-tAs (0≤t≤1), and the semiconductor substrate having a larger etching rate of the second removal layer for a predetermined etching material than the etching rate of the first removal layer for the predetermined etching material;
- removing the second removal layer by performing etching using the predetermined etching material;
- and
- bonding the semiconductor epitaxial layer to a destination substrate different from the base substrate after removing the second removal layer.
Dependencies are inferred from the claim text.