US 11,894,270 B2Granted

Grating replication using helmets and topographically-selective deposition

AssigneeIntel Corporation

InventorsKevin Lin, Sudipto Naskar, Manish Chandhok, Miriam Reshotko, Rami Hourani

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Abstract

Embodiments include an interconnect structure and methods of forming such an interconnect structure. In an embodiment, the interconnect structure comprises a first interlayer dielectric (ILD) and a first interconnect layer with a plurality of first conductive traces partially embedded in the first ILD. In an embodiment, an etch stop layer is formed over surfaces of the first ILD and sidewall surfaces of the first conductive traces. In an embodiment, the interconnect structure further comprises a second interconnect layer that includes a plurality of second conductive traces. In an embodiment, a via between the first interconnect layer and the second interconnect layer may be self-aligned with the first interconnect layer.

Claims8

Dependent claims

A method of forming an interconnect structure, comprising:

disposing a first interconnect layer in a first interlayer dielectric (ILD), wherein the first interconnect layer comprises a plurality of conductive traces;
recessing an uppermost surface of the first ILD, wherein the recessed uppermost surface of the first ILD is below uppermost surfaces of the first conductive traces;
disposing an etch stop layer over the first ILD and the first conductive traces;
selectively depositing a helmet layer over the first conductive traces, wherein the helmet layer is deposited with an atomic layer deposition (ALD) processes that comprises spinning a substrate on which the interconnect structure is formed;
disposing a second ILD over the interconnect structure, wherein the second ILD fills gaps between portions of the helmet layer on corresponding ones of the first conductive traces;
disposing a first hardmask layer over the second ILD;
removing the helmet layer;
and
disposing a third ILD in the gaps between the second ILD.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/720,152Filed 13 Apr 2022 · division
Priority: 29 Jun 2018
Published: US 2022/0238376 A128 Jul 2022
Granted: 6 Feb 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10W 20/069
Of conductive parts of the interconnections: by forming self-aligned vias or self-aligned contact plugs
H10W 20/071
Manufacture or treatment: of dielectric parts thereof
H10P 14/6339
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: deposition by cyclic CVD, e.g. ALD, ALE or…
H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials

Family

Application16/024,692Parent of this division · filed 29 Jun 2018
US 2022/0238376 A1Pre-grant publication · published 28 Jul 2022
US 11,335,598 B2Parent of this division
US 2020/0006138 A1Published application
US 11,894,270 B2This patent

From the US filing history. Foreign family members aren’t listed.