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US 11,894,268 B2Granted
Method for fabricating semiconductor device with intervening layer
AssigneeNanya Technology Corporation
InventorPing Hsu
Life of this patent
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Abstract
A method for fabricating the semiconductor device includes providing a substrate, forming a bottom conductive plug on the substrate, forming a semiconductor layer on the bottom conductive plug, rounding a top surface of the semiconductor layer, turning the semiconductor layer into an intervening conductive layer, and forming a top conductive plug on the intervening conductive layer
Claims8
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a bottom conductive plug on the substrate;
- forming an intervening conductive layer by the steps of:
- forming a center portion of the intervening conductive layer on the bottom conductive plug, wherein a bottom surface of the center portion is in direct contact with a top surface of the bottom conductive plug, wherein the center portion of the intervening conductive layer is formed of polycrystalline silicon, polycrystalline germanium, or polycrystalline silicon-germanium;
- and
- forming an outer portion of the intervening conductive layer to enclose the center portion thereof, wherein the outer portion has two ends in direct contact with the top surface of the bottom conductive plug and coplanar with the bottom surface of the center portion, wherein the outer portion of the intervening conductive layer is formed of metal silicide;
- and
- forming a top conductive plug on the outer portion of the intervening conductive layer.
5 more elements
Dependencies are inferred from the claim text.