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US 11,894,260 B2Granted
Replacement material for backside gate cut feature
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWang-Chun Huang, Yu-Xuan Huang, Hou-Yu Chen, Kuan-Lun Cheng, Chih-Hao Wang
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Abstract
A semiconductor structure includes a gate structure surrounding a plurality of channels and a cut feature that electrically isolates two separate portions of the gate structure. The cut feature comprises an outer layer having a work-function metal, and an inner layer comprising a dielectric material. The cut feature extends above a top surface of the gate structure.
Claims20
A semiconductor structure comprising:
- a substrate;
- a gate structure over the substrate;
- and
- a cut feature between two separate portions of the gate structure and in direct contact with both the two separate portions of the gate structure,
- wherein the cut feature comprises a dielectric layer and a work-function layer between the dielectric layer and the two separate portions of the gate structure, and
- wherein the work-function layer directly contacts the dielectric layer and is spaced apart from a channel region surrounded by the gate structure.
3 more elements
A semiconductor structure comprising:
- a first transistor comprising:
- a first plurality of nanostructures over a substrate, and
- a first gate structure wrapping around the first plurality of nanostructures;
- a second transistor comprising:
- a second plurality of nanostructures over the substrate, and
- a second gate structure wrapping around the second plurality of nanostructures;
- and
- an isolation structure disposed between the first transistor and the second transistor and configured to provide isolation between the first and second gate structures,
- wherein the isolation structure comprises a work-function layer on sidewalls of the first and second gate structures, and a dielectric layer wrapped by the work-function layer, and
- wherein the isolation structure extends into the substrate.
7 more elements
A semiconductor structure comprising:
- a gate structure surrounding a plurality of channel layers;
- and
- a cut feature that electrically isolates two separate portions of the gate structure,
- wherein the cut feature comprises an outer layer having a work-function metal, and an inner layer comprising a dielectric material, and
- wherein the cut feature extends above a top surface of the gate structure, and wherein a bottom surface of the outer layer is below a bottommost surface of the gate structure.
2 more elements
Dependencies are inferred from the claim text.