Semiconductor device and manufacturing method thereof
AssigneeFuji Electric Co., Ltd.
InventorsTakahiro Tamura, Michio Nemoto
Life of this patent
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Abstract
There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.
Claims25
A manufacturing method for a semiconductor diode, the manufacturing method comprising:
- providing an anode electrode on a front surface side of a semiconductor substrate;
- providing a drift region of a first conductivity type in the semiconductor substrate;
- providing a first anode region of the first conductivity type that is in Schottky contact with the anode electrode;
- and
- providing a second anode region of a second conductivity type that is different from the first conductivity type,
- wherein the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region, and
- wherein on the front surface of the semiconductor substrate, an area of the first anode region is greater than an area of the second anode region.
A manufacturing method for a semiconductor diode, the manufacturing method comprising:
- providing an anode electrode on a front surface side of a semiconductor substrate;
- providing a drift region of a first conductivity type in the semiconductor substrate;
- providing a first anode region of the first conductivity type that is in Schottky contact with the anode electrode;
- and
- providing a second anode region of a second conductivity type that is different from the first conductivity type,
- wherein the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region, and
- wherein a thickness of the second anode region in a depth direction below the first anode region is equal to or greater than 0.5 μm.
Dependencies are inferred from the claim text.