Method and system for recognizing and addressing plasma discharge during semiconductor processes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChih-Yu Wang
Life of this patent
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Abstract
A plasma discharge detection system detects undesirable plasma discharge events within a semiconductor process chamber. The plasma discharge detection system includes one or more cameras positioned around the semiconductor process chamber. The cameras capture images from within the semiconductor process chamber. The plasma discharge detection system includes a control system that receives the images from the cameras. The control system analyzes the images and detects plasma discharge within the semiconductor process chamber based on the images. The control system can adjust a semiconductor process in real time responsive to detecting the plasma discharge.
Claims15
A method comprising:
- performing a plasma assisted process on a wafer within a semiconductor process chamber including a top electrode and the wafer positioned on a bottom electrode, wherein the plasma assisted process generates an anode glow region adjacent to the top electrode, a cathode glow region adjacent to the bottom electrode and a plasma region between the anode glow region and the cathode glow region;
- capturing, while performing the plasma assisted process, images of plasma within the semiconductor process chamber with a plurality of groups of cameras positioned around the semiconductor process chamber from different angles and positions, each group including an infrared camera, a visible light camera, and an ultraviolet camera;
- processing the images with a control system;
- generating a 3D model of the plasma within the semiconductor process chamber based on the images;
- detecting, during the plasma assisted process, arcing between the top electrode and the wafer through the anode glow region, the plasma region, and the cathode glow region within the semiconductor process chamber with the control system based on the 3D model;
- determining a location of the arcing on the wafer within the semiconductor processing chamber based on the images and angles and positions of the plurality of groups of cameras;
- and
- adjusting, with the control system, the plasma assisted process during the plasma assisted process responsive to detecting the arcing.
A method, comprising:
- performing a plasma assisted semiconductor process on a semiconductor wafer in a semiconductor process chamber including a top electrode and the semiconductor wafer positioned on a bottom electrode, wherein the plasma assisted process generates an anode glow region adjacent to the top electrode, a cathode glow region adjacent to the bottom electrode and a plasma region between the anode glow region and the cathode glow region;
- capturing, with a plurality of groups of cameras positioned around the semiconductor process chamber from different angles and positions, a plurality of images of the semiconductor process chamber, each group including an infrared camera, a visible light camera and an ultraviolet camera;
- generating a 3D model of the plasma within the semiconductor process chamber based on the images;
- detecting, during the plasma assisted semiconductor process with a control system communicatively coupled to the one or more cameras, arcing between the top electrode and the wafer through the anode glow region, the plasma region and the cathode glow region within the semiconductor process chamber based on the 3D model;
- determining a location of the arcing on the semiconductor wafer within the semiconductor processing chamber based on the images and angles and positions of the cameras;
- and
- adjusting the semiconductor process within the semiconductor process chamber during the plasma assisted semiconductor process responsive to detecting arcing within the semiconductor process chamber.
Dependencies are inferred from the claim text.