Method of manufacturing semiconductor device having hybrid bonding interface
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a mothed of method of manufacturing a semiconductor device. The method includes steps of forming a dielectric layer on a substrate; etching the dielectric layer to create a plurality of openings in the dielectric layer; applying a sacrificial layer in at least one of the openings to cover at least a portion of the dielectric layer; forming at least one first conductive feature in the openings where the sacrificial layer is disposed and a plurality of bases in the openings where the sacrificial layer is not disposed; removing the sacrificial layer to form at least one air gap in the dielectric layer; and forming a plurality of protrusions on the bases.
Claims6
A method of manufacturing a semiconductor device, comprising:
- forming a dielectric layer on a substrate;
- etching the dielectric layer to create a plurality of openings in the dielectric layer;
- applying a sacrificial layer in at least one of the openings to cover at least a portion of the dielectric layer;
- forming at least one first conductive feature in the openings where the sacrificial layer is disposed and a plurality of bases in the openings where the sacrificial layer is not disposed;
- removing the sacrificial layer to form at least one air gap in the dielectric layer;
- and
- forming a plurality of protrusions on the bases, wherein the formation of the protrusions comprises:
- applying a patterned mask comprising a plurality of through holes on the dielectric layer, the first conductive feature and the bases, wherein portions of the bases are exposed through the through holes;
- and
- performing a plating process to deposit a conductive material in the through holes.
A method of manufacturing a semiconductor device, comprising:
- forming a dielectric layer on a substrate;
- etching the dielectric layer to create a plurality of openings in the dielectric layer;
- applying a sacrificial layer in at least one of the openings to cover at least a portion of the dielectric layer;
- forming at least one first conductive feature in the openings where the sacrificial layer is disposed and a plurality of bases in the openings where the sacrificial layer is not disposed;
- removing the sacrificial layer to form at least one air gap in the dielectric layer;
- forming a plurality of protrusions on the bases;
- depositing a diffusion barrier layer in the openings before the applying of the sacrificial layer in the openings;
- and
- removing portions of the diffusion barrier layer not covered by the first conductive feature and the base after the formation of the protrusions.
Dependencies are inferred from the claim text.