Semiconductor processing systems with in-situ electrical bias

A system for annealing a semiconductor wafer, the system comprising:

• a processing chamber;
• a heat source;
• a substrate holder configured to anneal the semiconductor wafer by exposing to the heat source;
• a first electrode configured to be detachably attached to a first major surface of the semiconductor wafer, a conductive outer surface of the first electrode making direct electrical contact with the first major surface of the semiconductor wafer;
• and
• a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer during the annealing.

A system for processing a semiconductor wafer, the system comprising:

• a processing chamber;
• a heat source;
• a substrate holder configured to expose the semiconductor wafer to the heat source;
• a first electrode configured to be detachably attached to the semiconductor wafer, an outer surface of the first electrode configured to be in physical contact with a first major surface of the semiconductor wafer when the first electrode is attached detachably to the semiconductor wafer;
• a power supply coupled to the first electrode;
• a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer;
• a third electrode physically separate from the first electrode and configured to be detachably attached to the semiconductor wafer, an outer surface of the third electrode configured to be in physical contact with the first major surface of the semiconductor wafer when the third electrode is attached detachably to the semiconductor wafer;
• and
• a voltmeter coupled between the third electrode and a reference potential, the voltmeter being configured to monitor an electric potential on the first major surface of the semiconductor wafer.