Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsMotomu Degai, Kimihiko Nakatani, Takashi Nakagawa, Takayuki Waseda, Yoshitomo Hashimoto
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Abstract
There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.
Claims21
A method of processing a substrate comprising:
- etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) forming a layer on a surface of the base by supplying a modifying agent to the base;
- and
- (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.
A method of manufacturing a semiconductor device, comprising:
- etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) forming a layer on a surface of the base by supplying a modifying agent to the base;
- and
- (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
- (a) forming a layer on a surface of the base by supplying a modifying agent to the base;
- and
- (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.
Dependencies are inferred from the claim text.