Back to results
US 11,894,233 B2Granted
Electronic device having an oxygen free platinum group metal film
AssigneeApplied Materials, Inc.
InventorsYixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
Life of this patent
Estimating the term…
Abstract
Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.
Claims9
An electronic device comprising:
- a conductive substrate comprising titanium nitride (TiN) free of oxide and having a thickness in a range of from 1 nm to 50 nm;
- at least one feature formed in the conductive substrate;
- and
- a platinum group metal film free of oxide on the conductive substrate and on the at least one feature, the platinum group metal film having a thickness of 30 Å, an impurity of less than 5 atomic %, a resistivity of less than 100 μΩ-cm, and greater than 95% step coverage.
1 more element
An electronic device comprising:
- a conductive substrate comprising titanium nitride (TiN) free of oxide and having a thickness in a range of from 1 nm to 50 nm;
- at least one feature formed in the conductive substrate;
- and
- a platinum group metal film free oxide on the conductive substrate and on the at least one feature, the platinum group metal film having a thickness of 30 Å, an impurity of less than 5 atomic %, resistivity of less than 100 μΩ-cm, and greater than 95% step coverage, the platinum group metal film having a roughness in a range of from 0.1 nm to 3.0 nm.
1 more element
Dependencies are inferred from the claim text.