Indium phosphide substrate, semiconductor epitaxial wafer, and method for producing indium phosphide substrate
AssigneeJX Metals Corporation
InventorsShunsuke Oka, Hideki Kurita, Kenji Suzuki
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Abstract
Provided is an indium phosphide substrate, a semiconductor epitaxial wafer, and a method for producing an indium phosphide substrate, which can satisfactorily suppress warpage of the back surface of the substrate. The indium phosphide substrate includes a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface, wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.
Claims13
An indium phosphide substrate comprising a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface,
- wherein the back surface has a BOW value of −2.0 to 2.0 μm, as measured with the back surface of the indium phosphide substrate facing upward.
Dependencies are inferred from the claim text.