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US 11,894,221 B2Granted
Sputtering target and magnetic film
AssigneeJX Metals Corporation
InventorsYasuyuki Iwabuchi, Manami Masuda, Takashi Kosho
Life of this patent
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Abstract
Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.
Claims4
A sputtering target comprising a sintered body, the sputtering target having metal phases and oxide phases, and comprising:
- from 0.1 mol % to 0.5 mol % of Bi;
- at least one of 4 mol % to 45 mol % of Cr and 15 mol % to 35 mol % of Pt;
- 50 mol % or less of Ru;
- and
- at least one oxide of at least one element selected from the group consisting of Co, Cr, Si, Ti, and B, wherein said at least one oxide has a volume fraction of 12% to 39%,
- the balance containing Co and inevitable impurities.
3 more elements
Dependencies are inferred from the claim text.