Method for processing substrate
AssigneeSemes Co., Ltd.
InventorJe Ho Kim
Life of this patent
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Abstract
The inventive concept relates to an apparatus and a method for processing a substrate. In an embodiment, the apparatus includes a process chamber having a processing space inside, a support unit that supports the substrate in the processing space, a gas supply unit that supplies a process gas into the processing space, and a plasma source that generates plasma from the process gas. The support unit includes a support on which the substrate is placed, an edge ring around the substrate placed on the support, an impedance adjustment member provided below the edge ring, and a temperature adjustment member that variably adjusts temperature of the impedance adjustment member.
Claims8
A method for processing a substrate, the method comprising:
- processing the substrate by supplying plasma onto the substrate placed on a support;
- and
- controlling a plasma density above an edge ring by adjusting a dielectric constant of a dielectric substance with ring shape placed below the edge ring, the edge ring being configured to surround a side of the substrate placed on the support,
- wherein the dielectric substance with ring shape has a highest dielectric constant at a first temperature, an increasing dielectric constant with a temperature rise in a range below the first temperature, and a decreasing dielectric constant with a temperature rise in a range above the first temperature, and
- wherein temperature of the dielectric substance with ring shape is raised in the range below the first temperature and lowered in the range above the first temperature when an amount of corrosion of the edge ring increases.
Dependencies are inferred from the claim text.