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US 11,894,162 B2Granted
Low-voltage electron beam control of conductive state at a complex-oxide interface
AssigneeUniversity of Pittsburgh—Of the Commonwealth System of Higher Education
InventorJeremy Levy
Life of this patent
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Abstract
Described is a method comprising directing an ultra-low voltage electron beam to a surface of a first insulating layer. The first insulating layer is disposed on a second insulating layer. The method includes modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property.
Claims20
A method comprising:
- (a) directing an ultra-low voltage electron beam to a surface of a first insulating layer, the first insulating layer disposed on a second insulating layer;
- (b) modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property, the interface being between the first insulating layer and the second insulating layer;
- and
- (c) directing the ultra-low voltage electron beam through an overlayer disposed on the first insulating layer.
1 more element
A reconfigurable device comprising:
- (a) a first insulating layer and a second insulating layer;
- (b) an interface between the first insulating layer and the second insulating layer;
- and
- (c) an overlayer disposed on the first insulating layer,
- wherein an electronic property of the interface is modifiable in response to an ultra-low voltage electron beam being directed to the first insulating layer.
2 more elements
An electronic assembly comprising:
- (a) one or more device electrodes;
- (b) one or more interface electrodes configured to be coupled with the one or more device electrodes;
- (c) a first insulating layer and a second insulating layer;
- (d) an interface between the first insulating layer and the second insulating layer, the interface coupled with the one or more interface electrodes;
- and
- (e) an overlayer disposed on the first insulating layer,
- wherein the electronic assembly is reconfigurable by directing an ultra-low voltage electron beam to the first insulating layer.
4 more elements
A method comprising:
- (a) directing an ultra-low voltage electron beam to a surface of a first insulating layer, the first insulating layer disposed on a second insulating layer;
- and
- (b) modifying, by the application of the ultra-low voltage electron beam, the surface of the first insulating layer to selectively switch an interface between a first state having a first electronic property and a second state having a second electronic property, the interface being between the first insulating layer and the second insulating layer,
- wherein the first state is a first conductive state and the second state is a second conductive state.
1 more element
Dependencies are inferred from the claim text.