Method, device, and circuit for high-speed memories
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJaspal Singh Shah, Atul Katoch
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJaspal Singh Shah, Atul Katoch
Estimating the term…
In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a plurality of memory cells arranged in an array, an input/output (I/O) interface connected to the plurality of memory cells to output data signal from each memory cell, and a control circuit. In some embodiments, the control circuit includes a first clock generator to generate a first clock signal and a second clock signal according to an input clock signal and a chip enable (CE) signal and provide the first clock signal to the plurality of memory cells. In some embodiments, the control circuit includes a second clock generator to generate a third clock signal according to the input clock signal and a DFT (design for testability) enable signal. In some embodiments, the control circuit generates an output clock signal according to the second clock signal or the third clock signal.
A memory device, comprising:
A control circuit, comprising:
A control circuit, comprising:
Dependencies are inferred from the claim text.