Anti-fuse memory and control method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorRumin Ji
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Abstract
Embodiments of the present disclosure relate to the field of semiconductor technology, and provide an anti-fuse memory and a control method thereof. The anti-fuse memory is configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory array is configured to receive the row strobe signal, and the anti-fuse memory array is programmed in response to the programming pulse signal. The embodiments of the present disclosure are at least advantageous to improving accuracy of reading data from the anti-fuse memory array and improving yield of the anti-fuse memory.
Claims16
An anti-fuse memory configured to generate a programming pulse signal based on a row strobe signal, a word line of the anti-fuse memory being configured to receive the row strobe signal, and the anti-fuse memory being programmed in response to the programming pulse signal;
- wherein the anti-fuse memory is further configured to generate the programming pulse signal with an adjustable duty factor based on the row strobe signal.
A control method for an anti-fuse memory, the control method comprising:
- generating a programming pulse signal in response to a row strobe signal;
- and
- programming in response to the programming pulse signal;
- wherein the generating a programming pulse signal in response to the row strobe signal comprises:
- generating the programming pulse signal in response to the row strobe signal and a reference pulse signal simultaneously, the reference pulse signal having an adjustable duty factor.
Dependencies are inferred from the claim text.