Apparatus and method for programming and verifying data in non-volatile memory device

An operating method of a non-volatile memory device, the operating method comprising:

• performing a foggy operation including a first application operation of applying a first application voltage to a selected word line among a plurality of word lines and a first verification operation of applying a first verification voltage having a same level as or a higher level than a target threshold voltage to the selected word line;
• performing a first determination of determining whether the foggy operation is completely performed according to whether a number of memory cells each having a threshold voltage higher than the first verification voltage is equal to or greater than a first predetermined number as a result of the first verification operation;
• performing a fine operation including a second application operation of applying a second application voltage to the selected word line and a second verification operation of applying a second verification voltage having the same level as the target threshold voltage;
• and
• performing a second determination of determining whether the fine operation is completely performed, according to whether a number of memory cells each having a threshold voltage lower than the second verification voltage is less than or equal to a second predetermined number as a result of the second verification operation.

An operating method of a nonvolatile memory device including a row of cells, the operating method comprising:

• performing a foggy program operation to the row;
• performing a foggy verification operation of verifying the foggy program operation by applying a foggy verification voltage, which is equal to or higher than a target threshold voltage, to the row and a foggy sensing voltage to columns of the respective cells;
• performing a fine program operation to the row when the foggy program operation is verified as successful;
• and
• performing a fine verification operation of verifying the fine program operation by applying a fine verification voltage, which is equal to the target threshold voltage, to the row and a fine sensing voltage, which is higher than the foggy sensing voltage, to the columns,
• wherein the foggy program operation is verified as successful when a number of the cells each having a threshold voltage higher than the foggy verification voltage is greater than a first threshold, and
• wherein the fine program operation is verified as successful when a number of the cells each having a threshold voltage lower than the foggy verification voltage is less than a second threshold.