Three-dimensional memory device
AssigneeMacronix International Co., Ltd.
InventorsTeng-Hao Yeh, Hang-Ting Lue, Tzu-Hsuan Hsu
Life of this patent
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Abstract
A three-dimensional memory device, such as 3D AND Flash memory device, includes a first page buffer, a second page buffer, a sense amplifier, a first path selector, and a second path selector. The first page buffer and the second page buffer are respectively configured to temporarily store a first write-in data and a second write-in data. The first path selector couples the sense amplifier or the first page buffer to a first global bit line according to a first control signal. The second path selector couples the sense amplifier or the second page buffer to a second global bit line according to a second control signal.
Claims16
A three-dimensional memory device, comprising:
- a first page buffer and a second page buffer, respectively configured to temporarily store a first write-in data and a second write-in data;
- a sense amplifier;
- a first path selector, coupled between a first global bit line, the sense amplifier, and the first page buffer, and coupling the sense amplifier or the first page buffer to the first global bit line according to a first control signal;
- and
- a second path selector, coupled between a second global bit line, the sense amplifier, and the second page buffer, and coupling the sense amplifier or the second page buffer to the second global bit line according to a second control signal,
- wherein the first global bit line is coupled to a first memory cell block, and the second global bit line is coupled to a second memory cell block, and the first memory cell block is different from the second memory cell block.
Dependencies are inferred from the claim text.