Apparatus and method for programming data in a non-volatile memory device
AssigneeSK hynix Inc.
InventorsTae Hun Park, Dong Hun Kwak
Life of this patent
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Abstract
A memory device includes a memory structure including at least one non-volatile memory cell capable of storing multi-bit data, and a control device configured to perform a program verification after a first program pulse is applied to the at least one non-volatile memory cell, determine a program mode for the at least one non-volatile memory cell based on a result of the program verification, and change a level of a pass voltage, applied to another non-volatile memory cell coupled to the at least one non-volatile memory cell, from a first level to a second level which is higher than the first level, or a setup time for changing a potential of a bit line coupled to the at least one non-volatile memory cell, according to the program mode.
Claims20
A memory device, comprising:
- a memory structure including at least one non-volatile memory cell capable of storing multi-bit data;
- and
- a control device configured to:
- perform a program verification after a first program pulse is applied to the at least one non-volatile memory cell,
- determine a program mode for the at least one non-volatile memory cell based on a result of the program verification, and
- change a level of a pass voltage, which is applied to another non-volatile memory cell coupled to the at least one non-volatile memory cell, from a first level to a second level which is higher than the first level or a setup time for changing a potential of a bit line coupled to the at least one non-volatile memory cell, according to the program mode,
- wherein the performing, the determining and the changing are performed during a data program operation of applying a plurality of program pulses to program multi-bit data to the at least one non-volatile memory cell.
A memory system, comprising:
- a memory device including plural non-volatile memory cells;
- and
- a controller configured to receive a write command and write data from a host, determine a location in which the write data is stored in the memory device, and transfer the write data to the memory device,
- wherein the memory device is configured to:
- determine a program mode which causes a change of threshold voltages of the plural non-volatile memory cells, and
- change a level of a pass voltage, which is applied to other non-volatile memory cells coupled to the plural non-volatile memory cells, from a first level to a second level which is higher than the first level or a setup time for changing a potential of a bit line coupled to the at least one non-volatile memory cell, according to the program mode, and
- wherein the determining and the changing are performed during a data program operation of applying a plurality of program pulses to program the write data to the plural non-volatile memory cells.
A method for operating a memory device, comprising:
- applying a first program pulse through a word line to program multi-bit data to plural non-volatile memory cells;
- verifying program states of the plural non-volatile memory cells, which correspond to the first program pulse;
- determining a program mode, which causes a change of threshold voltages of the plural non-volatile memory cells, for a second program pulse to be applied to the word line;
- and
- increasing a level of a pass voltage, which is applied to other non-volatile memory cells coupled to the plural non-volatile memory cells, from a first level to a second level, which is higher than the first level, before controlling a potential of a bit line according to the program mode while the second program pulse is applied to the word line, or adjusting a setup time for changing a potential of a bit line coupled to the at least one non-volatile memory cell, according to the program mode.
Dependencies are inferred from the claim text.