Temperature-dependent word line voltage and discharge rate for refresh read of non-volatile memory

A controller in communication with a memory apparatus including memory cells each connected to one of a plurality of word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states, the controller configured to:

• instruct the memory apparatus to apply a read voltage to a selected ones of the plurality of word lines during a read operation and ramp down to a discharge voltage at an end of the read operation and apply a ready voltage to the selected ones of the plurality of word lines during a ready period of time following the read operation;
• and
• adjust at least one of the discharge voltage and the ready voltage based on a temperature of the memory apparatus.

A method of operating a memory apparatus including memory cells each connected to one of a plurality of word lines and disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states, the method comprising the steps of:

• applying a read voltage to a selected ones of the plurality of word lines during a read operation and ramping down to a discharge voltage at an end of the read operation and applying a ready voltage to the selected ones of the plurality of word lines during a ready period of time following the read operation;
• and
• adjusting at least one of the discharge voltage and the ready voltage based on a temperature of the memory apparatus.