Method for refreshing row hammer, circuit for refreshing row hammer and semiconductor memory
AssigneeChangxin Memory Technologies, Inc.
InventorJixing Chen
Life of this patent
Estimating the term…
Abstract
A method for refreshing row hammer includes the following operations. A row hammer refresh instruction for a target word line is determined. According to the row hammer refresh instruction, a preset row hammer refresh signal is set to a valid state. The valid state of the preset row hammer refresh signal indicates that the row hammer refresh instruction is performed in a first refresh period. In response to detecting that the row hammer refresh instruction is not completed within the first refresh period, the valid state of the preset row hammer refresh signal will be continued to a next refresh period of the first refresh period.
Claims20
A method for refreshing a row hammer, comprising:
- determining a row hammer refresh instruction for a target word line;
- setting, according to the row hammer refresh instruction, a preset row hammer refresh signal to a valid state, wherein the valid state of the preset row hammer refresh signal indicates that the row hammer refresh instruction is performed in a first refresh period;
- and
- in response to detecting that the row hammer refresh instruction is not completed within the first refresh period, continuing the valid state of the preset row hammer refresh signal to a next refresh period of the first refresh period.
A circuit for refreshing a row hammer, comprising:
- a detection circuit, configured to:
- determine a row hammer refresh trigger signal and a refresh execution signal;
- and
- output a preset row hammer refresh signal in a valid state in response to the row hammer refresh trigger signal indicating that a row hammer refresh instruction for a target word line is received and the refresh execution signal indicating that the row hammer refresh instruction is not completed,
- wherein the valid state of the preset row hammer refresh signal indicates that the row hammer refresh instruction is performed within a first refresh period, and the valid state of the preset row hammer refresh signal will be continued to a next refresh period of the first refresh period in a case that the row hammer refresh instruction is not completed within the first refresh period.
A semiconductor memory comprising a circuit for refreshing row hammer, wherein the circuit comprises:
- a detection circuit, configured to:
- determine a row hammer refresh trigger signal and a refresh execution signal;
- and
- output a preset row hammer refresh signal in a valid state in response to the row hammer refresh trigger signal indicating that a row hammer refresh instruction for a target word line is received and the refresh execution signal indicating that the row hammer refresh instruction is not completed,
- wherein the valid state of the preset row hammer refresh signal indicates that the row hammer refresh instruction is performed within a first refresh period, and the valid state of the preset row hammer refresh signal will be continued to a next refresh period of the first refresh period in a case that the row hammer refresh instruction is not completed within the first refresh period.
Dependencies are inferred from the claim text.