Spiking neural network hardware based on magnetic-tunnel-junction layer stacks
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsVinayak Bharat Naik, Joel Tan, Jia Hao Lim, Kazutaka Yamane
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Abstract
Structures including a magnetic-tunnel-junction layer stack and methods of forming such structures. The structure comprises a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer, a free layer positioned between the reference layer and the antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer. The antiferromagnetic layer has a static magnetic field with a magnetization, and the antiferromagnetic layer is antiferromagnetically coupled to the free layer.
Claims20
A structure comprising:
- a magnetic-tunneling-junction layer stack including a reference layer, a first antiferromagnetic layer comprising a plurality of bilayers of cobalt and palladium or a plurality of bilayers of cobalt and platinum, a free layer positioned between the reference layer and the first antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer, the first antiferromagnetic layer having a static magnetic field with a magnetization, the first antiferromagnetic layer being antiferromagnetically coupled to the free layer, and the reference layer having a static magnetic field with a magnetization antiparallel to the magnetization of the first antiferromagnetic layer,
- wherein the free layer has a magnetization with a first state and a second state that differs from the first state, the first antiferromagnetic layer is configured to resist switching of the free layer from the first state to the second state, and the first antiferromagnetic layer is configured to assist switching of the free layer from the second state to the first state.
A method comprising:
- forming a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer comprising a plurality of bilayers of cobalt and palladium or a plurality of bilayers of cobalt and platinum, a free layer positioned between the reference layer and the antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer,
- wherein the antiferromagnetic layer has a static magnetic field with a magnetization, the reference layer has a static magnetic field with a magnetization antiparallel to the magnetization of the antiferromagnetic layer, the antiferromagnetic layer is antiferromagnetically coupled to the free layer, the free layer has a magnetization with a first state and a second state that differs from the first state, the antiferromagnetic layer is configured to resist switching of the free layer from the first state to the second state, and the antiferromagnetic layer is configured to assist switching of the free layer from the second state to the first state.
Dependencies are inferred from the claim text.