Storage container storing treatment liquid for manufacturing semiconductor
AssigneeFUJIFILM Corporation
InventorsTetsuya Shimizu, Tetsuya Kamimura
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Abstract
A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.
Claims19
A storage container comprising:
- a treatment liquid for manufacturing a semiconductor;
- and
- a storage portion that stores the treatment liquid,
- wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and
- a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing the semiconductor,
- wherein a mass of the particulate metal is measured by a SP-ICP-MS method.
A storage container comprising:
- a treatment liquid for manufacturing a semiconductor;
- and
- a storage portion that stores the treatment liquid,
- wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and
- a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing the semiconductor,
- wherein an inner wall of the storage portion that comes into contact with the treatment liquid is cleaned using a cleaning liquid having a contact angle of 10 degrees to 120 degrees on the inner wall before being filled with the treatment liquid.
Dependencies are inferred from the claim text.