Lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Che Tu, Po-Han Wang, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
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Abstract
A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a portion of the photoresist corresponding to a portion of the first stitching region is unexposed during the first light-exposure. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region and a functional feature in the second stitching region, and the portion of the photoresist is exposed by the functional feature during the second light-exposure.
Claims20
A method, comprising:
- exposing a photoresist to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a portion of the photoresist corresponding to a portion of the first stitching region is unexposed during the first light-exposure;
- and
- exposing the photoresist to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, a main die region aside the second stitching region and a functional feature partially in the main die region and partially in the second stitching region, and the portion of the photoresist is exposed by the functional feature during the second light-exposure.
A method, comprising:
- forming a photoresist layer over a dielectric layer;
- exposing a stitching region of the photoresist layer to a first light-exposure through a first mask, to form a first region which is unexposed and a second region which is exposed;
- after exposing the photoresist to the first light-exposure, exposing the stitching region of the photoresist to a second light-exposure through a second mask, wherein a first portion of the first region remains unexposed while a second portion of the first region is exposed during the second light-exposure, wherein the first portion has a shape of a circle;
- and
- after the second light-exposure, developing the photoresist.
A method, comprising:
- forming a negative photoresist over a dielectric layer;
- exposing an overlap region of the negative photoresist to a first light-exposure through a first mask, wherein a portion of the overlap region is unexposed by a first opaque region of the first mask during the first light-exposure, wherein the first opaque region of the first mask has a shape of a circle;
- after exposing the negative photoresist to the first light-exposure, exposing the overlap region of the negative photoresist to a second light-exposure through a second mask, wherein the portion of the overlap region remains unexposed;
- developing the negative photoresist to remove the portion of the overlap region, to form an opening in the overlap region;
- and
- patterning the dielectric layer to form a via hole.
Dependencies are inferred from the claim text.