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US 11,891,690 B2Granted
Molybdenum thin films by oxidation-reduction
AssigneeApplied Materials, Inc.
InventorsFeng Q. Liu, Alexander Jansen, Mark Saly
Life of this patent
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Abstract
A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.
Claims19
A method of forming a molybdenum film, the method comprising:
- exposing a substrate surface to an organometallic molybdenum precursor and an oxidant to form a molybdenum oxide film, the organometallic molybdenum precursor comprising one or more of CpMo(CO)2(NO) or MeCpMo(CO)2(NO);
- and
- reducing the molybdenum oxide film to form a molybdenum film.
A method of forming a molybdenum film, the method comprising:
- exposing a substrate surface maintained at a temperature in a range of about 100° C. to about 500° C. to a plurality of ALD cycles to form a molybdenum oxide film with a thickness in a range of 0.5 nm to about 10 nm, each cycle comprising exposure to an organometallic molybdenum precursor and an oxidant, the organometallic molybdenum precursor comprising one or more of CpMo(CO)2(NO) or MeCpMo(CO)2(NO);
- and
- exposing the molybdenum oxide film maintained at a temperature in a range of about 250° C. to about 500° C. to an alcohol to form a molybdenum film.
A method of forming a molybdenum film, the method comprising:
- exposing a substrate surface to a plurality of ALD cycles to form a molybdenum oxide film with a thickness in a range of 0.2 nm to about 100 nm, each cycle comprising exposure to an organometallic molybdenum precursor and an oxidant, the organometallic molybdenum precursor comprising one or more of CpMo(CO)2(NO) or MeCpMo(CO)2(NO), the molybdenum oxide film having a carbon content of less than or equal to about 5 atomic percent;
- and
- exposing the molybdenum oxide film to a reductant to form a molybdenum film, the molybdenum film having an impurity content of less than or equal to about 5 atomic percent.
Dependencies are inferred from the claim text.