Crossbar memory array in front end of line

A structure comprising:

• a phase change material layer on a substrate, wherein the phase change material layer is selected from a group consisting of amorphous silicon, amorphous germanium and amorphous silicon germanium, wherein the phase change material layer comprises a similar lattice constant as a lattice constant of the substrate;
• a top electrode on the phase change material layer, the top electrode vertically aligned above the phase change material layer;
• and
• a bottom electrode on the substrate, a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer.

A method to form a structure comprising:

• forming a bottom electrode on a substrate;
• forming a phase change material layer on the substrate adjacent to the bottom electrode,
• wherein the phase change material layer comprises a similar lattice constant as a lattice constant of the substrate;
• forming a top electrode vertically aligned above the phase change material;
• and
• forming a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer.