Multi-layer phase change memory device

A phase change memory (PCM) cell comprising:

• a first electrode comprised of a first electrically conductive material;
• a second electrode comprised of a second electrically conductive material;
• a first phase change layer positioned between the first electrode and the second electrode, the first phase change layer being comprised of a first phase change material;
• and
• a second phase change layer positioned between the first electrode and the second electrode, the second phase change layer being comprised of a second phase change material;
• wherein the second phase change layer is in contact with the first electrode and the second electrode.

A phase change memory (PCM) cell comprising:

• a first electrode comprised of a first electrically conductive material;
• a second electrode comprised of a second electrically conductive material;
• a first phase change layer positioned between the first electrode and the second electrode, the first phase change layer having a first thickness and being comprised of a first phase change material;
• a second phase change layer positioned between the first electrode and the second electrode, the second phase change layer having a second thickness and being comprised of a second phase change material;
• and
• a projection liner positioned between the first electrode and the second electrode and being comprised of a semiconducting material.