Mitigating moisture driven degradation of silicon doped chalcogenides
AssigneesInternational Business Machines Corporation, Macronix International Co., Ltd.
InventorsCheng-Wei Cheng, Huai-Yu Cheng, I-Ting Kuo, Robert L. Bruce, Martin Michael Frank, Hiroyuki Miyazoe
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Abstract
A method for mitigating moisture driven degradation of silicon doped chalcogenides includes placing a silicon doped chalcogenide composition in a process chamber, passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with forming gas or with hydrogen plasma, purging the forming gas or the hydrogen plasma from the process chamber, and removing the passivated silicon doped chalcogenide composition from the process chamber.
Claims20
A passivated silicon doped chalcogenide composition in which hydrogen atoms occupy silicon bonds that are not attached to chalcogens.
A method of forming a passivated silicon doped chalcogenide composition in which hydrogen atoms occupy silicon bonds that are not attached to chalcogens, the method comprising:
- placing a silicon doped chalcogenide composition in a process chamber;
- passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with forming gas;
- purging the forming gas from the process chamber;
- and
- removing the passivated silicon doped chalcogenide composition from the process chamber, wherein, in the passivated silicon doped chalcogenide composition, hydrogen atoms occupy silicon bonds that are not attached to chalcogens.
A method of forming a passivated silicon doped chalcogenide composition in which hydrogen atoms occupy silicon bonds that are not attached to chalcogens, the method comprising:
- placing a silicon doped chalcogenide composition in a process chamber;
- passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with a hydrogen plasma;
- purging the hydrogen plasma from the process chamber;
- and
- removing the passivated silicon doped chalcogenide composition from the process chamber, wherein, in the passivated silicon doped chalcogenide composition, hydrogen atoms occupy silicon bonds that are not attached to chalcogens.
Dependencies are inferred from the claim text.