Micro electro mechanical system and manufacturing method thereof

An electronic system, comprising:

• one or more MEMS devices, each of the one or more MEMS devices including:
• a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction, the second direction being perpendicular to the first direction;
• and
• at least one cantilevered member protruding from the side surface of the semiconductor substrate along a third direction perpendicular to the first and second directions, the at least one cantilevered member comprises:
• a body portion including:
• a piezoelectric material having a first sidewall and a second sidewall opposite to the first sidewall;
• a first collector layer on a first sidewall of the piezoelectric material;
• a second collector layer on a second sidewall of the piezoelectric material;
• a length along the third direction;
• a height along the first directions;
• and
• a width along the second direction, the width being less than the height;
• a first sub-portion extends outward from the first collector layer and is on the first collector layer, and the first sub-portion is fully separated from the piezoelectric material by the first collector layer;
• and
• a second sub-portion extends outward from the second collector layer and is on the second collector layer, and the second sub-portion is fully separated from the piezoelectric material by the second collector layer;
• and
• wherein the at least one cantilevered member being configured to vibrate by lateral bending along a direction perpendicular to the first direction.

A MEMS device, comprising:

• a semiconductor substrate including a first surface, a second surface opposite to the first surface, and a side surface that extends from the first surface to the second surface;
• a first cantilevered member protrudes from the side surface, the first cantilevered member includes:
• a first free end at which the first cantilevered member terminates;
• a first piezoelectric layer including a third surface, a fourth surface opposite to the third surface, a first sidewall extends from the third surface to the fourth surface and is transverse to the third surface and the fourth surface, and a second sidewall extends from the third surface to the fourth surface, is transverse to the third surface and the fourth surface, and is opposite to the first sidewall, the first piezoelectric layer extends from the side surface of the semiconductor substrate to the first free end;
• a first collector layer on the first sidewall, the first collector layer extends from the side surface of the semiconductor substrate to the first free end;
• a second collector layer on the second sidewall, the second collector layer extends from the side surface of the semiconductor substrate to the first free end;
• a first sub-portion on the first collector layer;
• and
• a second sub-portion on the second collector layer, the second sub-portion is opposite to the first sub-portion about the first piezoelectric layer, the first collector layer, and the second collector layer.