US 11,889,745 B2Granted

QLED manufacturing method

AssigneeTcl Technology Group Corporation

InventorsJie Zhang, Chaoyu Xiang

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Abstract

The present application discloses a QLED manufacturing method including: providing a substrate provided with an electron transport layer; depositing a solution on a surface of the electron transport layer, standing until the electron transport layer is infiltrated, and then performing a drying operation, wherein the solution includes a main solvent and a solute dissolved in the main solvent, a polarity of the solute is greater than a polarity of the main solvent, and the solution is not able to dissolve the electron transport material in the electron transport layer; preparing other film layers on the electron transport layer processed by the mixed solvent to prepare the QLED, such that the QLED at least includes: an anode and a cathode arranged oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and the electron transport layer between the quantum dot light emitting layer and the cathode.

Claims20

Dependent claims

A QLED manufacturing method, comprising the following steps of:

providing a substrate provided with an electron transport layer, wherein the substrate provided with the electron transport layer comprises:
an anode substrate, a quantum dot light emitting layer provided on the anode substrate, and the electron transport layer provided on a side of the quantum dot light emitting layer facing way from the anode substrate;
wherein the substrate provided with the electron transport layer further comprises a cathode substrate, and the electron transport layer is provided on the cathode substrate;
depositing a solution on a surface of the electron transport layer, standing until the electron transport layer is infiltrated by the solution, and then performing a drying operation, wherein the solution comprises a main solvent and a solute dissolved in the main solvent, a polarity of the solute is greater than a polarity of the main solvent, and the solution is not able to dissolve an electron transport material in the electron transport layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 17/419,622Filed 17 Sep 2019
Priority: CN 201811639626.129 Dec 2018
Published: US 2022/0085293 A117 Mar 2022
Granted: 30 Jan 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10K 71/311
Manufacture or treatment specially adapted for the organic devices covered by this subclass: purifying organic semiconductor materials
H10K 85/60
Organic materials used in the body or electrodes of devices covered by this subclass: organic compounds having low molecular weight
H10K 50/115
Characterised by the electroluminescent [EL] layers: comprising active inorganic nanostructures, e.g. luminescent quantum dots
H10K 50/16
Carrier transporting layers: electron transporting layers